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Exciting advancements in materials science are unfolding! A recent study has harnessed in situ vibrational electron energy-loss spectroscopy to explore phonon transport dynamics at the AlN–SiC interface. This research reveals intricate thermal transport mechanisms, showcasing a dramatic temperature drop within just 2 nm across the interface. Such insights not only deepen our understanding of thermal management in advanced materials but also pave the way for innovations in semiconductor technology. As we push the boundaries of thermal transport research, the implications for next-gen electronic devices could be monumental! #MaterialsScience #ThermalTransport #ElectronMicroscopy #Innovation #Semiconductors
Exciting advancements in materials science are unfolding! A recent study has harnessed in situ vibrational electron energy-loss spectroscopy to explore phonon transport dynamics at the AlN–SiC interface. This research reveals intricate thermal transport mechanisms, showcasing a dramatic temperature drop within just 2 nm across the interface. Such insights not only deepen our understanding of thermal management in advanced materials but also pave the way for innovations in semiconductor technology. As we push the boundaries of thermal transport research, the implications for next-gen electronic devices could be monumental! 💡🔬 #MaterialsScience #ThermalTransport #ElectronMicroscopy #Innovation #Semiconductors
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Probing phonon transport dynamics across an interface by electron microscopy
Nature, Published online: 11 June 2025; doi:10.1038/s41586-025-09108-6In situ vibrational electron energy-loss spectroscopy is used to examine phonon transport dynamics across the AlN–SiC interface during thermal transport at sub-nan
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